| 摘要 |
PROBLEM TO BE SOLVED: To broaden the range of an operating voltage in which an on-current increases, in a diode configured by short-circuiting an emitter and a base of a bipolar transistor.SOLUTION: A first second-conductivity-type high-concentration layer DL1 and a first-conductivity-type high-concentration layer DL2 are formed in a surface layer of a well WL. A second second-conductivity-type high concentration layer SL is formed in a surface layer of a semiconductor substrate SUB and is formed deeper than the well WL. A second-conductivity-type buried layer BL is formed in the semiconductor substrate SUB, is connected to a bottom portion of the second second-conductivity-type high-concentration layer SL, and at a part of the layer is overlapped with the well WL in a plan view. First wiring INC1 is connected to the first second-conductivity-type high-concentration layer DL1 and the first-conductivity-type high-concentration layer DL2. An edge of an element isolation film STI is in contact with the first second-conductivity-type high-concentration layer DL1 and the first-conductivity-type high-concentration layer DL2 in a plan view. |
