发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device which employs flip-chip connection having a columnar electrode.SOLUTION: A semiconductor device manufacturing method comprises: providing when bonding a second surface of a Cu pillar CB formed on a principal surface of a semiconductor chip with a top face of a lead electrode LE formed on a top face of a wiring board IS by using a solder, between a first inter-metal compound layer IMC1 formed on the second surface of the Cu pillar CB and a second inter-metal compound layer IMC2 formed on the top face of the lead electrode LE, an intermediate layer ISO as a tin(Sn)-rich layer formed on the top face of the lead electrode LE; further providing constriction to the intermediate layer ISO. By doing this, deformation due to external stress caused by a difference in thermal expansion between the semiconductor chip and the wiring board IS is received by the intermediate layer ISO thereby to reduce stress applied to a bottom and the like of the Cu pillar CB and avoid breaking at a bonded part of the Cu pillar CB and the lead electrode LE.</p>
申请公布号 JP2014229623(A) 申请公布日期 2014.12.08
申请号 JP20130105246 申请日期 2013.05.17
申请人 RENESAS ELECTRONICS CORP 发明人 IWASAKI TOSHIHIRO;SHIMOTE YOSHIKAZU;KATO TAKEMI
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址