发明名称 SURFACE TREATMENT APPARATUS AND SURFACE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a surface treatment apparatus and a surface treatment method, which enable a hard film to be formed precisely and efficiently as a thin film without selecting a substance to be treated.SOLUTION: A surface treatment apparatus 1 includes: a reaction part 5 including a reaction chamber 51 to be filled with a gas containing at least a reaction gas, and a holding part 52 for holding a substance 60 to be treated in the reaction chamber; an electron beam output part 2 for outputting an electron beam A into the reaction chamber 51 of the reaction part 5 to thereby change the reactive gas into a plasma; and a control part 70 for controlling the electron beam A output from the electron beam output part 2. The reaction chamber 51 can form a hard film on the surface of the substance 60 to be treated held in the holding part 52, by using at least one of a physical vapor deposition and a chemical vapor deposition,. The control part 70 controls the output waveform of the electron beam A to be output from the electron beam output part 2 into the reaction chamber 51, in such a way that an optimum plasma state for forming a hard film in the reaction chamber 51 is obtained.
申请公布号 JP2014227593(A) 申请公布日期 2014.12.08
申请号 JP20130110660 申请日期 2013.05.27
申请人 DENSO CORP;NAGOYA UNIV 发明人 IBE MITSUTAKA;HORI MASARU
分类号 C23C16/50;C23C14/06;H05H1/00;H05H1/24 主分类号 C23C16/50
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