| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high breakdown resistance amount.SOLUTION: A semiconductor device includes: a first element 1 that is a normally-on transistor composed of a nitride compound semiconductor; a second element 2 that is a transistor connected in series to the first element 1 and having a lower withstand voltage between a source and a drain than the first element 1; a first diode 3 connected between a gate of the first element 1 or the second element 2 and a drain of the first element 1 so that a cathode is connected to the drain, and having a predetermined avalanche withstand voltage; and a first resistor 4 connected to the gate to which the first diode 3 is connected. The avalanche withstand voltage of the first diode 3 is lower than the breakdown voltage of the first element 1. |
