| 摘要 |
PROBLEM TO BE SOLVED: To prevent step disconnection of a gate electrode formed on an oxide semiconductor layer via a gate insulation film and prevent reduction of an oxide semiconductor, to improve element characteristics.SOLUTION: A method for manufacturing a thin film transistor using an oxide semiconductor as a channel, comprises the steps of: forming an oxide semiconductor layer 20 on a part of a substrate 10; forming a first gate insulation film 31 composed of a silicon oxide film on the oxide semiconductor layer 20 and the substrate 10 by a CVD method using a silane-based material gas; forming a second gate insulation film 32 composed of a silicon oxide film on the first gate insulation film 31 by a CVD method using TEOS as a material gas; and forming a gate electrode 40 on the second gate insulation film 32. |
