| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having higher resistance.SOLUTION: In a semiconductor device, a first region has a first semiconductor layer, a first semiconductor region, a second semiconductor region, a third semiconductor region having a higher impurity concentration than the first semiconductor region, a first electrode electrically connected to the second semiconductor region and the third semiconductor region, a second electrode electrically connected to the first semiconductor layer, a third electrode reaching to the position of the first semiconductor layer from the position of the second semiconductor region, and a fourth electrode juxtaposed to the third electrode and in contact with the first semiconductor layer via an insulating film. A second region has a pad electrode electrically connected to the third electrode above the first semiconductor layer. A third region has the first semiconductor layer, the first semiconductor region provided on the first semiconductor layer, the third semiconductor region in contact with the first semiconductor region, the first electrode electrically connected to the third semiconductor region, the second electrode electrically connected to the first semiconductor layer, and an insulating layer reaching to the position of the first semiconductor layer from the position of the third semiconductor region. |
