| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device comprises: an electrode 16 and a dummy electrode DE which are formed on a semiconductor substrate away from each other; an electrode 23 formed between the electrode 16 and the dummy electrode DE, on a peripheral side surface of the electrode 16 and on a peripheral side surface of the dummy electrode DE; and a capacitative insulation film 27 formed between the electrode 16 and the electrode 23. The electrode 16, the electrode 23 and the capacitative insulation film 27 form a capacitative element. The semiconductor device further comprises: a plug PG1 which pierces an interlayer insulation film 34 and is electrically connected with the electrode 16; and a plug PG2 which pierces the interlayer insulation film 34 and is electrically connected with a portion of the electrode 23, which is formed on a lateral face of the dummy electrode DE on the side opposite to the electrode 16 side. |
