SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve cost reduction based on reduction in the number of manufacturing processes and achieve excellent reliability while suppressing yield reduction caused by roughness of a SiC surface.SOLUTION: A semiconductor device manufacturing method comprises: a process (S1) of selectively implanting an impurity ion into a surface of a SiC semiconductor layer for forming an impurity region; and a process (S2) of activating the impurity ion by performing a heat treatment on the SiC semiconductor layer at a temperature of 1400°C and over in a state where the surface of the SiC semiconductor layer is covered with an insulation film after the formation of the impurity region.