发明名称 PHOTODETECTOR
摘要 PROBLEM TO BE SOLVED: To provide an easy-to-manufacture photodetector which allows for detection of light even in the infrared region with high sensitivity without relying upon the incident angle.SOLUTION: A photodetector includes: an organic semiconductor 20 having a protrusion; a metal layer 30 added on the organic semiconductor 20 and promoting at least one of localized plasmon resonance and surface plasmon resonance, where electrons are excited by irradiation with detection light; and a semiconductor 40 bonded to the metal layer 30 and allowing the electrons excited by plasmon resonance to pass the joint 40a between the metal layer 30 and the semiconductor 40.
申请公布号 JP2014229779(A) 申请公布日期 2014.12.08
申请号 JP20130109015 申请日期 2013.05.23
申请人 OLYMPUS CORP;UNIV OF TOKYO;KYUSHU UNIV 发明人 AJIKI YOSHIHARU;SHIMOYAMA ISAO;MATSUMOTO KIYOSHI;SUGA TETSURO;KARAKI KOICHI;SASAKI YASUO;YATSUHIRO MASAYUKI;HAMADA AKIKO;ADACHI CHIHAYA
分类号 H01L31/108;G01J1/02;H01L51/05 主分类号 H01L31/108
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