| 摘要 |
<p>The specification discloses a flat panel display device having an oxide thin film transistor and a manufacturing method thereof. The flat panel display device having an oxide thin film transistor according to the present invention comprises: a buffer film formed on a substrate; an oxide semiconductor layer of a width of a first length (L1) formed on the buffer film; a gate insulation film of a width of a second length (L2) formed on the oxide semiconductor layer; a gate electrode of a width of a third length (L3) formed on the gate insulation film; an interlayer insulation film formed on a front surface of the substrate where the gate electrode is formed; source and drain electrodes which are formed on the interlayer insulation film to be connected with the semiconductor layer; a protective film which is formed on the front surface of the substrate where the source and drain electrodes are formed; and a pixel electrode which is formed on the protective film to be connected with the drain electrode. The present invention is characterized in that the first length (L1), the second length (L2), and the third length (L3) have a relation of L1 > L2 > L3, the oxide semiconductor layer includes a channel area and source and drain areas, and the gate electrode is overlapped with the channel area. The flat panel display device comprises the gate insulation film, where a tail portion is formed, an effective channel length is guaranteed in a metallization process of the semiconductor layer, and the number of mask processes is decreased by using the gate insulation film as a mask, thereby simplifying a manufacturing process.</p> |
