发明名称 PHOTORESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, ACID GENERATOR, AND PHOTODEGRADABLE BASE
摘要 <p>A photoresist composition containing a polymer having a structural unit including an acid-labile group, and a compound represented by the formula (1). In the formula (1), R1 represents a hydrogen atom or a monovalent acid-labile group. R2 represents an alicyclic hydrocarbon group having 3 to 20 carbon atoms and a valency of (m+1). m is an integer of 2 to 5. R3 and R4 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. n is an integer of 0 to 5. At least two of a plurality of R1 s optionally taken together represent a ring structure, together with a plurality of oxygen atoms bonding to R1 and the carbon atom(s) constituting R2 and bonding to these oxygen atoms. M+ represents a monovalent radiation-degradable onium cation.</p>
申请公布号 KR20140139511(A) 申请公布日期 2014.12.05
申请号 KR20147026723 申请日期 2013.02.22
申请人 JSR CORPORATION 发明人 NAMAI HAYATO;NAKAHARA KAZUO;IKEDA NORIHIKO
分类号 G03F7/039;C07D317/70;G03F7/004 主分类号 G03F7/039
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