METHOD FOR FORMING OXIDE THIN FILM AND METHOD FOR FABRICATING OXIDE THIN FILM TRANSISTOR IMPLEMENTING CHANNEL DOPING AND PASSIVATION IN ONE STEP

摘要

The present invention relates to a method for forming an oxide thin film and a method for fabricating an oxide thin film transistor and, more specifically, to a method for forming an oxide thin film and a method for fabricating an oxide thin film transistor performing channel doping and passivation at the same time. The method for forming an oxide thin film according to an embodiment of the present invention can comprise the following steps of: forming a first oxide thin film containing indium; forming a second oxide thin film containing at least one among aluminum, zirconium, and hafnium on the first oxide thin film; and performing a heat treatment for the first and second oxide thin films.