发明名称 |
THERMOELECTRIC MATERIALS OPTIMIZED ON THERMOELECTRIC PROPERTY |
摘要 |
<p>The present invention relates to a thermoelectric material optimized for thermal attributes. More specifically, the thermoelectric material optimized for thermal attributes is highly electrically conductive compared to conventional metals and semiconductors and is designed to have small electrical band gap. Accordingly, the present invention includes a layer mixture of layered structure compounds having the composition of formula MQ2 / MQ′2.</p> |
申请公布号 |
KR101469760(B1) |
申请公布日期 |
2014.12.05 |
申请号 |
KR20130122643 |
申请日期 |
2013.10.15 |
申请人 |
AGENCY FOR DEFENSE DEVELOPMENT |
发明人 |
KIM, DAE YEON;SHIM, JI HOON;LEE, CHANG HOON;HONG, JI SOOK |
分类号 |
H01L35/16 |
主分类号 |
H01L35/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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