NITRIDE SEMICONDUCTOR AND METHOD THEREOF

摘要

Provided are a nitride semiconductor (or epitaxial substrate) and a method thereof. The nitride semiconductor has a high threshold voltage through a supper lattice layer structure and a normally-off characteristic by the insertion of an impurity doped layer at the same time. For this, a semiconductor device according to an embodiment may include a buffer layer; a supper lattice layer formed on the buffer layer; a channel layer which is formed on the supper lattice layer and is made of GaN; a barrier layer formed on the channel layer; and a p-GaN layer formed on the barrier layer.