| 摘要 |
<p>PROBLEM TO BE SOLVED: To inhibit variation in hardening rate of an adhesive caused by contact of a semiconductor chip in a semiconductor device manufacturing method of bonding the semiconductor chip on one surface of a substrate via a thermosetting adhesive.SOLUTION: A semiconductor device manufacturing method comprises: an adhesive process of arranging an adhesive 20 on one surface 11 of a substrate 10; and a bonding process of mounting a semiconductor chip 30 on the one surface 11 of the substrate 10 by contacting the semiconductor chip 30 with the adhesive 20 by using a collet 100 for applying heat to the semiconductor chip 30 while holding the semiconductor chip 30 and bonding the semiconductor chip 30 to the substrate 10 by application of heat and pressure. In the bonding process, a temperature of the semiconductor chip 30 is detected by a temperature detection element 200, and the semiconductor chip 30 is brought into contact with the adhesive 20 after the temperature of the semiconductor chip 30 reaches an intended temperature by control of a temperature of the collet 100 based on the detected temperature of the semiconductor chip 30.</p> |
