| 发明名称 |
THIN FILM TRANSISTOR USING A CARBON NANOTUBE AS A CHANNEL AND A DISPLAY DEVICE INCLUDING THE SAME |
| 摘要 |
A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other. |
| 申请公布号 |
US2014353592(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201414460395 |
申请日期 |
2014.08.15 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. ;SNU R&DB FOUNDATION |
发明人 |
Park Sang Ho;Shin Young Ki;Khang Yoon Ho;Lee Joo Hyung;Lee Hyung Woo;Hong Seung Hun |
| 分类号 |
H01L27/28;H01L51/00;H01L51/05 |
主分类号 |
H01L27/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor, comprising:
a gate electrode configured to receive a control voltage; a source electrode insulated from the gate electrode, and configured to receive an input voltage; a drain electrode insulated from the gate electrode, and configured to receive an output voltage; at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other; at least one floating electrode connecting the carbon nanotube patterns to each other; and a gate insulating layer insulating the gate electrode from the source electrode and the drain electrode. |
| 地址 |
YONGIN-CITY KR |
