发明名称 DETECTION APPARATUS, METHOD OF MANUFACTURING THE SAME, AND RADIATION DETECTION SYSTEM
摘要 A method of manufacturing a detection apparatus including pixels is provided. The method includes forming an organic insulation layer above a substrate above which a switching element is formed, forming pixel electrodes divided for individual pixels above the organic insulation layer; forming an inorganic material portion above a portion of the organic insulation layer, which is uncovered with the pixel electrodes, forming an inorganic insulation film covering the plurality of pixel electrodes and the inorganic material portion, forming a semiconductor film covering the inorganic insulation film, and dividing the semiconductor film for individual pixels by etching using a stacked structure of the inorganic material portion and the inorganic insulation film as an etching stopper.
申请公布号 US2014353470(A1) 申请公布日期 2014.12.04
申请号 US201414288816 申请日期 2014.05.28
申请人 CANON KABUSHIKI KAISHA 发明人 Kawanabe Jun;Watanabe Minoru;Yokoyama Keigo;Ofuji Masato;Fujiyoshi Kentaro;Wayama Hiroshi
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A method of manufacturing a detection apparatus including a plurality of pixels, comprising: forming an organic insulation layer above a substrate above which a switching element is formed; forming a plurality of pixel electrodes divided for individual pixels above the organic insulation layer; forming an inorganic material portion above a portion of the organic insulation layer, which is uncovered with the plurality of pixel electrodes; forming an inorganic insulation film covering the plurality of pixel electrodes and the inorganic material portion; forming a semiconductor film covering the inorganic insulation film; and dividing the semiconductor film for individual pixels by etching using a stacked structure of the inorganic material portion and the inorganic insulation film as an etching stopper.
地址 Tokyo JP