发明名称 |
DETECTION APPARATUS, METHOD OF MANUFACTURING THE SAME, AND RADIATION DETECTION SYSTEM |
摘要 |
A method of manufacturing a detection apparatus including pixels is provided. The method includes forming an organic insulation layer above a substrate above which a switching element is formed, forming pixel electrodes divided for individual pixels above the organic insulation layer; forming an inorganic material portion above a portion of the organic insulation layer, which is uncovered with the pixel electrodes, forming an inorganic insulation film covering the plurality of pixel electrodes and the inorganic material portion, forming a semiconductor film covering the inorganic insulation film, and dividing the semiconductor film for individual pixels by etching using a stacked structure of the inorganic material portion and the inorganic insulation film as an etching stopper. |
申请公布号 |
US2014353470(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414288816 |
申请日期 |
2014.05.28 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Kawanabe Jun;Watanabe Minoru;Yokoyama Keigo;Ofuji Masato;Fujiyoshi Kentaro;Wayama Hiroshi |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a detection apparatus including a plurality of pixels, comprising:
forming an organic insulation layer above a substrate above which a switching element is formed; forming a plurality of pixel electrodes divided for individual pixels above the organic insulation layer; forming an inorganic material portion above a portion of the organic insulation layer, which is uncovered with the plurality of pixel electrodes; forming an inorganic insulation film covering the plurality of pixel electrodes and the inorganic material portion; forming a semiconductor film covering the inorganic insulation film; and dividing the semiconductor film for individual pixels by etching using a stacked structure of the inorganic material portion and the inorganic insulation film as an etching stopper. |
地址 |
Tokyo JP |