| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor in which miniaturization of a transistor is achieved and electric field relaxation is realized.SOLUTION: In a method for manufacturing a semiconductor device, width of a gate electrode is shrunken, and a space between a source electrode layer and a drain electrode layer is narrowed. Since a low-resistivity region in contact with a channel formation region can be provided in an oxide semiconductor layer by adding rare gas in a self-aligned manner using the gate electrode as a mask, the low-resistivity region can be provided with high alignment accuracy, even if the width of the gate electrode, that is, line width of gate wiring, is shrunken, thereby miniaturization of a transistor is achieved.</p> |
