MITIGATING RELIABILITY DEGRADATION OF ANALOG MEMORY CELLS DURING LONG STATIC AND ERASED STATE RETENTION

摘要

A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

主权项

1. A method, comprising:
in a non-volatile memory that includes multiple memory cells that store data using a predefined set of programming levels, including an erased level, receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period; setting the memory cells in the group to a retention programming level that is different from the erased level; and upon preparing to program the group of memory cells with data, erasing the group of memory cells to the erased level and then programming the data in the group of memory cells.