| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal manufacturing apparatus for preventing a SiC single crystal from sticking to a guide while preventing the fastening between the SiC single crystal and a SiC polycrystal, thereby to prevent the reduction of a bore diameter of the growing SiC single crystal.SOLUTION: The diameter of a pedestal 10 is made larger than that of a seed crystal 5. As a result, a distance from the seed crystal 5 to a guide 12 can be retained to suppress the influence of a purge gas and to suppress a SiC polycrystal 21 from sticking to an outer marginal part 10d. While preventing the fastening between a SiC single crystal 20 and the SiC polycrystal 21, the SiC single crystal 20 can also be prevented from sticking to the guide 12, and the diameter of the growing SiC single crystal 20 can also be prevented from reducing. |
