发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a first insulating layer (interlayer insulating layer), a resistive element that is disposed over the first insulating layer (interlayer insulating layer) and at least a surface layer of which is a TaSiN layer, and an interlayer insulating layer disposed over the first insulating layer (interlayer insulating layer) and the resistive element. Multiple via plugs having ends coupled to the TaSiN layer are disposed in the interlayer insulating layer. |
申请公布号 |
US2014357047(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414458976 |
申请日期 |
2014.08.13 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
KAWAHARA Jun;INOUE Naoya;FURUTAKE Naoya;HAYASHI Yoshihiro |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi JP |