INTEGRATED HALL EFFECT SENSOR

摘要

The generation of a Hall voltage within a semiconductor film of an integrated Hall effect sensor uses the flow of a current within the semiconductor film when subjected to a magnetic field. The film is disposed on top of an insulating layer, referred to as buried layer, which is itself disposed on top of a carrier substrate containing a buried electrode that is situated under the insulating layer. A biasing voltage is applied to the buried electrode.

主权项

1. A method for generating a Hall voltage within a semiconductor film disposed on top of an insulating layer which is disposed on top of a carrier substrate containing a buried electrode situated under the insulating layer, comprising:
flowing a current within the semiconductor film that is subjected to a magnetic field, and biasing the buried electrode with a bias voltage.