| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency. |
| 申请公布号 |
US2014353679(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201214365370 |
申请日期 |
2012.12.12 |
| 申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Seo Won Cheol;Cho Dae Sung;Lee Chung Hoon;Nam Ki Bum |
| 分类号 |
H01L33/22;H01L33/46;H01L33/38;H01L33/00;H01L33/32;H01L33/42 |
主分类号 |
H01L33/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting diode (LED), comprising:
a conductive substrate; and a gallium nitride (GaN)-based semiconductor stack disposed on the conductive substrate, wherein the semiconductor stack comprises an active layer comprising a semi-polar semiconductor material. |
| 地址 |
Ansan-si KR |
