| 摘要 |
Provided is a method for producing graphene with which it is possible to increase the domain size of graphene. In a plasma CVD film formation device (10): a catalyst metal layer (55) formed on a wafer (W) is activated and changed into an activated catalyst metal layer (56); C2H4 gas, which is a carbon-containing gas with low reactivity, is decomposed by a plasma in a space (S2) that opposes the wafer (W); and further, C2H2 gas, which is a carbon-containing gas with high reactivity, is decomposed by heat in the space (S2). |
