发明名称 |
DETECTION DEVICE AND DETECTION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a detection device capable of achieving both of good adhesion between an impurity semiconductor layer and a pixel electrode and good dark current characteristics of a conversion element.SOLUTION: In a detection device having a substrate 100 capable of transmitting visible light; a conversion element 12 which has a pixel electrode, an impurity semiconductor layer 123 and a semiconductor layer 124 in order from the substrate 100 side and converts radioactive ray or light into electrical charge; and a light source 24 which irradiate the conversion element 12 with visible light through the substrate 100, the pixel electrode contains a metal layer 122 having a thickness in which at least part of it can transmit visible light. |
申请公布号 |
JP2014225527(A) |
申请公布日期 |
2014.12.04 |
申请号 |
JP20130103327 |
申请日期 |
2013.05.15 |
申请人 |
CANON INC |
发明人 |
OFUJI MASAHITO;WATANABE MINORU;YOKOYAMA KEIGO;KAWANABE JUN;FUJIYOSHI KENTARO;WAYAMA HIROSHI |
分类号 |
H01L27/146;G01T7/00;H01L27/144;H01L31/10 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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