发明名称 DETECTION DEVICE AND DETECTION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a detection device capable of achieving both of good adhesion between an impurity semiconductor layer and a pixel electrode and good dark current characteristics of a conversion element.SOLUTION: In a detection device having a substrate 100 capable of transmitting visible light; a conversion element 12 which has a pixel electrode, an impurity semiconductor layer 123 and a semiconductor layer 124 in order from the substrate 100 side and converts radioactive ray or light into electrical charge; and a light source 24 which irradiate the conversion element 12 with visible light through the substrate 100, the pixel electrode contains a metal layer 122 having a thickness in which at least part of it can transmit visible light.
申请公布号 JP2014225527(A) 申请公布日期 2014.12.04
申请号 JP20130103327 申请日期 2013.05.15
申请人 CANON INC 发明人 OFUJI MASAHITO;WATANABE MINORU;YOKOYAMA KEIGO;KAWANABE JUN;FUJIYOSHI KENTARO;WAYAMA HIROSHI
分类号 H01L27/146;G01T7/00;H01L27/144;H01L31/10 主分类号 H01L27/146
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