发明名称 THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME
摘要 <p>The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.</p>
申请公布号 KR20140138675(A) 申请公布日期 2014.12.04
申请号 KR20147024380 申请日期 2013.02.19
申请人 KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION;LINTEC CORPORATION 发明人 KATO KUNIHISA;ADACHI CHIHAYA;MIYAZAKI KOJI;HAYAKAWA TERUAKI
分类号 H01L35/14;H01L35/16;H01L35/32;H01L35/34 主分类号 H01L35/14
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