发明名称 METAMATERIAL STRUCTURES FOR Q-SWITCHING IN LASERS
摘要 Techniques described herein are generally related to metamaterial structures for Q-switching in laser systems. The various described techniques may be applied to methods, systems, devices or combinations thereof. Sonic described metamaterial structures may include a substrate and a first conductive layer disposed on a first surface of the substrate. A dielectric layer may be disposed on a first surface of the first conductive layer and a second conductive layer having a substantially symmetric geometric shape may be disposed on a first surface of the dielectric layer. The second conductive layer may cover a portion of the first surface of the dielectric layer.
申请公布号 US2014355639(A1) 申请公布日期 2014.12.04
申请号 US201314131899 申请日期 2013.04.17
申请人 Indian Institute of Technology 发明人 Anantha Ramakrishna Subramaniam;Singh Govind Dayal
分类号 H01S3/08;H01S3/11 主分类号 H01S3/08
代理机构 代理人
主权项 1. A metamaterial structure, comprising: a substrate; a first conductive layer disposed on a first surface of the substrate; a dielectric layer disposed on a first surface of the first conductive layer, wherein the dielectric layer is configured to undergo a phase change with a change in temperature from an absorptive state to a reflective state at a transition temperature of the dielectric layer in response to heat generated by absorption of infrared radiation by the metamaterial structure; and a second conductive layer disposed on a first surface of the dielectric layer, wherein the second conductive layer covers at least a portion of the first surface of the dielectric layer, and wherein the second conductive layer has a substantially symmetric geometric shape.
地址 Kanpur IN
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