| 发明名称 |
Power module comprising two substrates and method of manufacturing the same |
| 摘要 |
A method of manufacturing a power module comprising two substrates is provided, wherein the method comprises disposing a compensation layer of a first thickness above a first substrate; disposing a second substrate above the compensation layer; and reducing the thickness of the compensation layer from the first thickness to a second thickness after the second substrate is disposed on the compensation layer |
| 申请公布号 |
US2014353818(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201313909133 |
申请日期 |
2013.06.04 |
| 申请人 |
Infineon Technologies AG |
发明人 |
GEITNER Ottmar;HABLE Wolfram;Grassmann Andreas;Winter Frank;Neugirg Christian;Nikitin Ivan |
| 分类号 |
H01L21/56;H01L23/00;H01L23/31 |
主分类号 |
H01L21/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a power module comprising two substrates, the method comprising:
disposing a compensation layer of a first thickness above a first substrate; disposing a second substrate above the compensation layer; and reducing the thickness of the compensation layer from the first thickness to a second thickness after the second substrate is disposed on the compensation layer. |
| 地址 |
Neubiberg DE |
