发明名称 FLAT PANEL DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE FLAT PANEL DISPLAY APPARATUS
摘要 A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer.
申请公布号 US2014353669(A1) 申请公布日期 2014.12.04
申请号 US201314061359 申请日期 2013.10.23
申请人 Samsung Display Co., Ltd. 发明人 Seo Il-Hun;Choi Jong-Hyun;So Byung-Soo;Son Yong-Duck;Seo Jin-Wook
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项 1. A display apparatus comprising: a substrate; an active layer overlapping the substrate and comprising a channel region, a source region, and a drain region; a first insulating layer disposed on the substrate and the active layer; a gate electrode disposed on the first insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the first insulating layer and the second gate electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material; a contact portion disposed on the first insulating layer and comprising a first contact layer that is formed of the first material; a second insulating layer disposed on the gate electrode and the contact portion and comprising a first contact hole, a second contact hole, and a third contact hole, wherein the first contact hole exposes a portion of the source region, wherein the second contact hole exposes a portion of the drain region, and wherein the third contact hole exposes a portion of the first contact layer; a source electrode formed on the second insulating layer and contacting the source region via the first contact hole; a drain electrode formed on the second insulating layer and contacting the drain region via the second contact hole; and a pixel electrode formed on the second insulating layer and contacting the first contact layer via the third contact hole.
地址 Yongin-City KR