| 发明名称 |
PLASMA DOPING APPARATUS, PLASMA DOPING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
| 摘要 |
A plasma doping apparatus which performs doping by injecting dopants into a substrate to be processed. The apparatus includes a processing container, a gas supplying unit configured to supply a doping gas and an inert gas for plasma excitation into the processing container, a holding table configured to hold the substrate to be processed, a plasma generating mechanism configured to generate plasma in the processing container using a microwave, a pressure adjusting mechanism configured to adjust a pressure in the processing container, and a control unit configured to control the plasma doping apparatus. The control unit controls the pressure adjusting mechanism to set the pressure in the processing container to be equal to or more than 100 mTorr and less than 500 mTorr such that a plasma processing is performed on the substrate to be processed using the plasma generated by the plasma generating mechanism. |
| 申请公布号 |
US2014357068(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201214371609 |
申请日期 |
2012.10.19 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Horigome Masahiro;Ueda Hirokazu;Oka Masahiro;Kobayashi Yuuki;Karakawa Takayuki |
| 分类号 |
H01L21/223;C23C16/452 |
主分类号 |
H01L21/223 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma doping apparatus which performs doping by injecting dopants into a substrate to be processed, the apparatus comprising:
a processing container in which dopants are injected into the substrate to be processed; a gas supplying unit configured to supply a doping gas and an inert gas for plasma excitation into the processing container; a holding table disposed in the processing container and configured to hold the substrate to be processed; a plasma generating mechanism configured to generate plasma in the processing container using a microwave; a pressure adjusting mechanism configured to adjust a pressure in the processing container; and a control unit configured to control the plasma doping apparatus, wherein the control unit controls the pressure adjusting mechanism to set the pressure in the processing container to be equal to or more than 100 mTorr and less than 500 mTorr such that a plasma processing is performed on the substrate to be processed using the plasma generated by the plasma generating mechanism. |
| 地址 |
Tokyo JP |
