发明名称 ELECTROSTATIC CHUCK DEVICE
摘要 An electrostatic chuck device is provided in which there is no concern that a plate-shaped sample may be deformed when adsorbing the plate-shaped sample or when detaching the plate-shaped sample, the temperature of the plate-shaped sample is uniformized, and particles are not easily produced.;In an electrostatic chuck device 1 provided with an electrostatic chuck section 2 which has a placement plate 11, an upper surface 11a of which is a placement surface on which a plate-shaped sample W such as a semiconductor wafer is placed, a support plate 12 integrated with the placement plate 11, and an internal electrode for electrostatic adsorption 13 and an insulating material layer 14 which are provided between the placement plate 11 and the support plate 12, an annular projection portion 21 is provided at a peripheral border portion on the upper surface 11a, a plurality of projection portions 22 having the same height as the height of the annular projection portion 21 are provided in an area surrounded by the annular projection portion 21 of the upper surface 11a, and an upper end portion of the annular projection portion 21 and an upper end portion of each of the plurality of projection portions 22 are located on a concave surface 23 with a central portion of the upper surface 11a as a basal plane.
申请公布号 US2014355169(A1) 申请公布日期 2014.12.04
申请号 US201414286898 申请日期 2014.05.23
申请人 SUMITOMO OSAKA CEMENT CO., LTD. 发明人 Maeta Shinichi;Kosakai Mamoru;Miura Yukio;Otsuka Takeshi
分类号 H01L21/683 主分类号 H01L21/683
代理机构 代理人
主权项 1. An electrostatic chuck device comprising: an electrostatic chuck section which has a base material having one principal surface as a placement surface on which a plate-shaped sample is placed, and an internal electrode for electrostatic adsorption that electrostatically adsorbs the plate-shaped sample to the placement surface, wherein an annular projection portion is provided at a peripheral border portion on the one principal surface, and a plurality of projection portions having the same height as the height of the annular projection portion are provided in an area surrounded by the annular projection portion on the one principal surface, and an upper end portion of the annular projection portion and upper end portions of the plurality of projection portions are located on a concave surface with a central portion of the one principal surface as a basal plane.
地址 Tokyo JP