SEMICONDUCTOR DEVICE HAVING INSULATING LAYERS CONTAINING OXYGEN AND A BARRIER LAYER CONTAINING MANGANESE

摘要

A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

主权项

1. A semiconductor device comprising:
an insulating layer formed over a semiconductor substrate, the insulating layer containing oxygen; a wire formed in the insulating layer, the wire containing copper; a structure formed in the wire, the structure containing oxygen; and an oxide layer formed between the wire and the structure, or between the wire and the insulating layer, the oxide layer containing manganese.