| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve a layout suitable for microfabrication and facilitate readout of information written in a memory cell located farthest from an impurity diffusion region for a bit line.SOLUTION: The semiconductor device comprises: a bit line 43 that is a straight line extending in an X direction; first and second horizontal active regions 81 and 82 extending in the X direction; an inclined active region 83 disposed between first and second horizontal active regions 81 and 82 and inclined with respect to the X direction; an active region 19-1 in which an impurity diffusion region for a bit line is disposed in the center; a first word line 89 disposed in the first horizontal active region 81; a second word line 95 disposed in the second horizontal active region 82; and third and fourth word lines 98 and 103 disposed in the inclined active region 83 so as to be adjacent to each other across the impurity diffusion region for a bit line. |
