| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has less feedback capacity and a low switching loss.SOLUTION: A semiconductor device according to the present embodiment comprises: a semiconductor substrate 20; semiconductor layers formed on a surface of the semiconductor substrate 20; a drain electrode 77 formed on a rear face of the semiconductor substrate 20; and a gate electrode 50 for forming a channel in the semiconductor layer. The semiconductor layers include: a drift layer 21 formed on the semiconductor substrate 20; a plurality of second conductivity type first well regions 41 which are formed on the drift layer 21 and opposed to the gate electrode 50 across a gate insulation film 30; and a second conductivity type second well region 43 which is arranged in the semiconductor layer and between the gate electrode 50 and the drain electrode 77, and connected to the adjacent first well regions 41. A maximum value of a second conductivity type impurity concentration in the second well region 43 appears at a position between the gate electrode 50 and the drain electrode 77 and deeper than a surface of the semiconductor layer. |
