BIPOLAR TRANSISTOR, BAND-GAP REFERENCE CIRCUIT AND VIRTUAL GROUND REFERENCE CIRCUIT

摘要

The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact. Processes of forming the bipolar transistor are fully compatible with traditional standard CMOS processes; and the base current to turn on the bipolar transistor is based on the GIDL current and formed by applying a voltage to the base area control-gate electrode without any need of contact to the base.

主权项

1. A method for operating a bipolar transistor, wherein the bipolar transistor comprises a substrate, an emitter, a collector, a base located between the emitter and the collector, a dielectric layer overlapping atop the base, and a gate structure on the dielectric layer, and wherein the base is disposed between the emitter and the collector, a conductivity type of the emitter is the same as that of the collector, and a conductivity type of the base is opposite to that of the emitter and the collector, the method comprising:
applying a first voltage to the emitter; applying a second voltage to the collector; and applying a third voltage to the gate structure with respect to the first voltage and the second voltage, such that minority carriers flow from the collector into the base as a result of the bias between the third voltage and the second voltage, and further flow from the base into the emitter as a result of the bias between the first voltage and the third voltage.