SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a substrate, a first insulation layer formed on the substrate in a first region, a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region, and a photon absorption layer formed on the photon absorption seed layer in the first region. The photon absorption seed layer has a particular structure that may assist in reducing dislocation density in a region that includes a photon absorption layer.

主权项

1. A semiconductor device comprising:
a substrate; a first insulation layer formed on the substrate in a first region; a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region; and a photon absorption layer formed on the photon absorption seed layer in the first region, wherein: the photon absorption seed layer includes a first portion extending in a horizontal direction on the first insulation layer in the first region, a second portion extending in a horizontal direction on the substrate in the second region, and a third portion extending vertically between the first portion and the second portion.