| 发明名称 |
FIELD EFFECT TRANSISTOR STRUCTURE COMPRISING A STACK OF VERTICALLY SEPARATED CHANNEL NANOWIRES |
| 摘要 |
A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials. |
| 申请公布号 |
US2014353574(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201313896537 |
申请日期 |
2013.05.17 |
| 申请人 |
The Board of Trustees of the University of Illinois |
发明人 |
Li Xiuling;Song Yi |
| 分类号 |
H01L29/06;H01L29/66;H01L29/205;H01L29/78;H01L29/10;H01L29/20 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field effect transistor structure comprising:
a source and a drain on a substrate; and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20, the channel nanowires collectively comprising at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials. |
| 地址 |
Urbana IL US |
