METHOD FOR MANUFACTURING BOWL-SHAPED SURFACE STRUCTURES OF SINGLE-CRYSTALLINE SILICON SUBSTRATES AND A SINGLE-CRYSTALLINE SILICON SUBSTRATE WITH BOWL-SHAPED SURFACE STRUCTURES

摘要

A single-crystalline silicon substrate with bowl-shaped surface structures and a manufacturing method of the same are provided. The manufacturing method comprises a sandblasting treatment for forming a textured structure on one surface of the single-crystalline silicon substrate and an etching process for etching the textured structure into plural bowl-shaped surface structures, thereby to manufacture the bowl-shaped surface structures with anti-reflection effect and to lower the reflection ratio of the single-crystalline silicon substrate. Without the need of coating an anti-reflection film, the single-crystalline silicon substrate with bowl-shaped textured surface structures has a very low reflection ratio of less than 2% in the 400-800 nm wavelength visible light region, and can be used as efficient silicon-based solar cell substrate.

主权项

1. A method for manufacturing bowl-shaped surface structures of single-crystalline silicon substrates, the method comprising the steps of:
providing a single-crystalline silicon substrate, wherein the single-crystalline silicon substrate is fixed separably to a baseboard made of a rigid material; performing a sandblasting treatment on the single-crystalline silicon substrate to thereby sandblast the single-crystalline silicon substrate, such that the single-crystalline silicon substrate has a textured surface full of a plurality of textured surface structures; performing first-instance rinsing for removing the single-crystalline silicon substrate having the textured surface from the baseboard and performing ultrasonic rinsing on the single-crystalline silicon substrate to remove therefrom residual impurities left behind by the sandblasting step; forming bowl-shaped surface structures by etching the textured surface with an etching solution until each textured surface structure forms a bowl-shaped surface structure; and performing second-instance rinsing by performing ultrasonic rinsing on the single-crystalline silicon substrate having the bowl-shaped surface structures and removing the residual etching solution from a surface of the single-crystalline silicon substrate.