Edge Counter-Doped Solar Cell With Low Breakdown Voltage

摘要

A solar cell having a large region where reverse breakdown can occur is disclosed. Reverse breakdown tends to occur near areas where heavily doped n-type regions abut heavily doped p-type regions. Thus, by increasing the region where such a heavily doped p/n junction exists may improve the reverse breakdown characteristics of the solar cell. In addition, a method of making such solar cell is disclosed, where this heavily doped p/n junction is fabricated along at least a portion of the perimeter of the solar cell.

主权项

1. A solar cell, comprising:
a substrate having a first surface, an opposite second surface and a plurality of edges between said first surface and said second surface, wherein a linear length of said plurality of edges defines a perimeter of said substrate, said substrate having a first conductivity; a first heavily doped region, having a second conductivity, opposite said first conductivity, disposed on said first surface and extending along said edges; and a second heavily doped region, having said first conductivity, disposed on said second surface and extending along said edges under said first heavily doped region, such that a p/n junction is formed along at least 40% of said perimeter.