| 摘要 |
A semiconductor wafer evaluation method characterized by including: a step in which a reference wafer having a known contamination element and contamination amount is prepared; a step in which a plurality of cells including pn junctions are formed on the reference wafer; a step in which the junction leakage currents of the plurality of cells on the reference wafer are measured and the junction leakage current distribution for the reference wafer is obtained; a step in which the junction leakage current distribution for the reference wafer and the contamination element are associated; a step in which a plurality of cells including pn junctions are formed on a wafer to be measured; a step in which the junction leakage currents of the plurality of cells on the wafer to be measured are measured and the junction leakage current distribution for the wafer to be measured is obtained; and a step in which the contamination element in the wafer to be measured is identified, on the basis of said association. |
