| 摘要 |
The present invention relates to a device for manufacturing silicon ingots, provided with divisional crucible guides, wherein crucible guides are divided into multiples, assembled and laminated so as to minimize the transfer of the heat transferred from a heater to the divisional crucible guides, from an upper divisional crucible guide to a lower divisional crucible guide during silicon ingot solidification. Therefore, it is possible to obtain high quality ingots with unidirectional crystal growth in the vertical direction. |
