发明名称 PRODUCTION METHOD OF In-Ga-Zn COMPOUND OXIDE SINTERED BODY
摘要 PROBLEM TO BE SOLVED: To provide a production method of an IGZO (In-Ga-Zn compound oxide) sintered body, by which an IGZO target can be inexpensively produced and a high relative density of 97 to 100% can be achieved, and to provide an IGZO sintered body and a target.SOLUTION: The production method includes: a step (a) of preparing a granulated powder by mixing a mixed powder containing indium, gallium, zinc and oxygen and satisfying the following mixing conditions with an organic binder to prepare a slurry and then drying the slurry by spray drying; a step (b) of filling a capsule container with the granulated powder and conducting a treatment to remove the binder to obtain a raw material powder; and a step (c) of subjecting the raw material powder in the capsule to a capsule hot isotropic pressing process. In the step (a), the slurry is dried by spray drying in such manner that a fill factor calculated by the formula of (tap density)/(theoretical density of a sintered body)×100 becomes 50% or more when the capsule container is filled with the mixture powder. The mixing conditions: when a metal atomic ratio In:Ga:Zn is expressed by x:y:z, x/(x+y) ranges from 0.2 to 0.8 and z/(x+y+z) ranges from 0.1 to 0.5.
申请公布号 JP2014224036(A) 申请公布日期 2014.12.04
申请号 JP20140086913 申请日期 2014.04.18
申请人 SUMITOMO CHEMICAL CO LTD 发明人 NAKADA KUNIHIKO
分类号 C04B35/00;C23C14/34 主分类号 C04B35/00
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