| 发明名称 |
NONVOLATILE MEMORY DEVICE |
| 摘要 |
A nonvolatile memory device includes first to N-th memory blocks, wherein N is an integer and N≧3. Each memory block, of the first to N-th memory blocks comprises first to (M−1)-th strings, wherein each string, of the first to (M−1)-th strings, includes drain-side memory cells, source-side memory cells, and a pipe transistor connecting the drain-side memory cells and the source-side memory cells, where M is an integer and M≧2, and an M-th string, including drain-side memory cells formed adjacent to the first string, of a first to (M−1)-th strings, and including source-side memory cells formed adjacent to an (M−1)-th string of the first to (M−1)-th strings. |
| 申请公布号 |
US2014355346(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201314040043 |
申请日期 |
2013.09.27 |
| 申请人 |
SK hynix Inc. |
发明人 |
PARK Jin-Su |
| 分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory device comprising first to N-th memory blocks, wherein N is an integer and N≧3, and
wherein each memory block, of the first to N-th memory blocks, comprises: first to (M−1)-th strings, wherein each string, of the first to (M−1)-th strings, includes drain-side memory cells, source-side memory cells, and a pipe transistor connecting the drain-side memory cells and the source-side memory cells, where M is an integer and M≧2; and an M-th string, including drain-side memory cells formed adjacent to the first string, of a first to (M−1)-th strings, and including source-side memory cells formed adjacent to an (M−1)-th string of the first to (M−1)-th strings. |
| 地址 |
Gyeonggi-do KR |
