| 摘要 |
This invention describes a hermetically sealed package which can be implanted in the body. The package comprise of stacked substrates where surface of one substrate hosts biosensors which are exposed to body fluids to monitor concentrations of substances selected from analytes, metabolites, and proteins, and body physiological parameters. The structure protects from body fluids devices that interface with the biosensor electrodes for electronic data processing, powering, and wireless communication. Biosensor electrodes are electrically connected to various electronic, optoelectronic, MEM devices using novel partial silicon vias (PSVs) that prevents leakage of body fluids. Various devices are located on different substrates which are stacked to save surface area. One of the substrate forms the cover plate which permits light for powering as well as sending receiving coded data including the analyte levels. |
| 主权项 |
1. A device, comprising:
a layered structure in Si configured to form Si Vias for hermetically sealed electrical connectivity between two sets of devices, which are realized on at least two Si layers of a Si-on-insulator substrate, wherein the Si-on-insulator substrate is comprised of a first Si layer and a second Si layer separated by a first SiO2 layer serving as an insulator,
wherein the first Si layer has on it a deposited second insulator film selected from SiO2, SiN, HfO2, andwherein Si pillars are created in the first Si layer by etching regions surrounding the Si pillars, wherein the Si pillars are supported by a first oxide layer and the second Si layer,wherein the exposed surface of the Si pillars and surrounding surface of the first Si layer are deposited with thin oxide layer selected from SiO2, HfO2, Si3N4, SiON, andwherein etched regions are filled with material selected from undoped amorphous Si, SiO2, HfO2, wherein the Si pillars have a top side and a bottom side, the bottom side interfaces with first oxide,wherein the second Si layer and the first oxide layer under the Si pillars are etched to expose the bottom side of the Si pillar in the first Si layer,wherein the exposed Si surface of bottom side of pillars are deposited with a metal providing Ohmic contact, wherein the metal is selected from gold, arsenic doped gold, aluminum, Pt, Pd, TiN, and TaN, and wherein the Ohmic contact is deposited with a metal pad selected from a biocompatible non-corrosive metal selected from Au, Pt, and Pd, and wherein the second Si layer side opposite to the first SiO2 layer is deposited with a passivation insulator layer selected from SiO2, HfO2, SiN, and Al2O3, and wherein the passivation insulator layer is patterned to expose second Si layer which is deposited with electrodes to form biosensors, electronic circuits, optoelectronic circuits, ultrasonic transducers and other devices that operate electrically, wherein the top side of the Si pillars are deposited with a metal providing Ohmic contact, and wherein the metal is selected from gold, arsenic doped gold, aluminum, Pt, Pd, TiN, and TaN, and wherein the Ohmic contact is deposited with a metal pad selected from Au, Pt, Pd, and wherein the metal pads on top side of Si pillars are connected to devices selected from electronic, photonic, optoelectronic, and micro-electro-mechanical realized in first Si layer. |
