发明名称 |
METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES |
摘要 |
A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level. |
申请公布号 |
US2014353760(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201313907613 |
申请日期 |
2013.05.31 |
申请人 |
STMicroelectronics, Inc. |
发明人 |
Loubet Nicolas;Khare Prasanna;Liu Qing |
分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
1. A method for making co-integrated finFETs, the method comprising:
forming a plurality of fins of a first semiconductor material for finFETs of a first type; removing a portion of the plurality of fins to form voids; and filling the voids with a second semiconductor material to form fins for finFETs of a second type. |
地址 |
Coppell TX US |