| 发明名称 |
FINFET DEVICE AND FABRICATION METHOD THEREOF |
| 摘要 |
A transistor device may include a substrate that has a well portion. The transistor device may further include a source member and a drain member. The transistor device may further include a fin bar. The fin bar may be formed of a first semiconductor material, may be disposed between the source member and the drain member, and may overlap the well portion. The transistor device may further include a fin layer. The fin layer may be formed of a second semiconductor material, may be disposed between the source member and the drain member, and may contact the fin bar. |
| 申请公布号 |
US2014353715(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201414280217 |
申请日期 |
2014.05.16 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
XIAO De Yuan |
| 分类号 |
H01L27/088;H01L29/66;H01L21/8234 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor device comprising:
a substrate having a first-type well portion; a first source member; a first drain member; a first fin bar formed of a first semiconductor material, disposed between the first source member and the first drain member, and overlapping the first-type well portion; and a first fin layer formed of a second semiconductor material, disposed between the first source member and the first drain member, and contacting the first fin bar. |
| 地址 |
Shanghai CN |
