发明名称 |
WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME |
摘要 |
A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump. |
申请公布号 |
US2014353708(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414462029 |
申请日期 |
2014.08.18 |
申请人 |
SEOUL SEMICONDUCTOR CO., LTD. |
发明人 |
SEO Won Cheol;Cho Dae Sung |
分类号 |
H01L33/62;H01L33/50;H01L33/10 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting diode (LED), comprising:
a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types; a first contact layer disposed on the first type semiconductor layer; a second contact layer disposed on the second type semiconductor layer; a first insulation layer covering the second contact layer, sidewalls of the active layer, and the second semiconductor layer, and contacting the first contact layer, the first insulation layer comprising a first opening exposing the first semiconductor layer and a second opening exposing the second contact layer; a second insulation layer is disposed on the first insulation layer; a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer; a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer; and a third insulation layer disposed on side surfaces of the first bump and the second bump. |
地址 |
Ansn-si KR |