发明名称 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME
摘要 A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump.
申请公布号 US2014353708(A1) 申请公布日期 2014.12.04
申请号 US201414462029 申请日期 2014.08.18
申请人 SEOUL SEMICONDUCTOR CO., LTD. 发明人 SEO Won Cheol;Cho Dae Sung
分类号 H01L33/62;H01L33/50;H01L33/10 主分类号 H01L33/62
代理机构 代理人
主权项 1. A light-emitting diode (LED), comprising: a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types; a first contact layer disposed on the first type semiconductor layer; a second contact layer disposed on the second type semiconductor layer; a first insulation layer covering the second contact layer, sidewalls of the active layer, and the second semiconductor layer, and contacting the first contact layer, the first insulation layer comprising a first opening exposing the first semiconductor layer and a second opening exposing the second contact layer; a second insulation layer is disposed on the first insulation layer; a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer; a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer; and a third insulation layer disposed on side surfaces of the first bump and the second bump.
地址 Ansn-si KR