发明名称 |
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE |
摘要 |
Provided is a nitride semiconductor light-emitting diode having a higher light extraction efficiency and a higher polarization degree. A nitride semiconductor light-emitting diode according to the present invention comprises an active layer generating a polarized light, a first side surface, a second side surface, a third side surface, and a fourth side surface. The first and second side surfaces consist only of a plane including the Z-axis and the Y-axis. The third and fourth side surfaces are perpendicular to the first and second side surfaces and include the X-axis. The third and fourth side surfaces include an inclined surface. |
申请公布号 |
US2014353699(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414292942 |
申请日期 |
2014.06.02 |
申请人 |
Panasonic Corporation |
发明人 |
FUJITA TOSHIYUKI;YOKOGAWA TOSHIYA;INOUE AKIRA |
分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
1. A nitride semiconductor light-emitting diode, comprising:
an n-side electrode; a p-side electrode; a nitride semiconductor stacking structure formed of a plurality of nitride semiconductor layers each having a principal surface of a non-polar plane or a semi-polar plane; an active layer which is included in the nitride semiconductor stacking structure and generates a polarized light; a first side surface; a second side surface; a third side surface; and a fourth side surface, wherein X-axis is parallel to a polarization direction of the polarized light; Z-axis is parallel to a normal direction of the principal surface; Y-axis is perpendicular to both of the X-axis and the Z-axis; the nitride semiconductor light-emitting diode comprises a light extraction surface through which the polarized light is emitted toward the outside of the nitride semiconductor light-emitting diode; the light extraction surface has a normal line parallel to the Z-axis; the first side surface consists only of a plane including the Z-axis and the Y-axis; the second side surface consists only of a plane including the Z-axis and the Y-axis; the second side surface is disposed parallel to the first side surface (150a); the third side surface is perpendicular to the first and second side surfaces and includes the X-axis; the fourth side surface is perpendicular to the first and second side surfaces and includes the X-axis; the third side surface includes an inclined surface; the fourth side surface includes an inclined surface; the third and fourth side surfaces are symmetric with respect to a plane which includes the Z-axis and the X-axis; and the following mathematical formulae (I), (II), and (III) are satisfied:
15 degrees≦θ≦70 degrees (I)0.1≦(L3 cos θ)/h1≦0.5 (II)L2<L1 (III) where θ represents an angle formed between the inclined surface and the Z-axis in a cross-sectional view including the Z-axis and the Y-axis; h1 represents a height of the nitride semiconductor light-emitting diode in the cross-section; L1 represents a width of the nitride semiconductor light-emitting diode in the cross-section; L2 represents a width of the light extraction surface in the cross-section; and L3 represents a length of the inclined surface in the cross-section. |
地址 |
Osaka JP |