发明名称 METHOD AND STRUCTURE FOR ELIMINATING EDGE PEELING IN THIN-FILM PHOTOVOLTAIC ABSORBER MATERIALS
摘要 A method for manufacturing a thin-film photovoltaic device includes providing a glass substrate contained sodium species. The glass substrate comprising a surface region and a peripheral edge region surround the surface region. The method further includes forming a barrier material overlying the surface region and partially overlying the peripheral edge region and forming a conductor material overlying the barrier material. Additionally, the method includes forming at least a first trench in a vicinity of the peripheral edge region to remove substantially the conductor material therein and forming precursor materials overlying the patterned conductor material. Furthermore, the method includes thermally treating the precursor materials to transform the precursor materials into a film of photovoltaic absorber. The first trench is configured to maintain the film of photovoltaic absorber substantially free from peeling off the conductor material.
申请公布号 US2014352782(A1) 申请公布日期 2014.12.04
申请号 US201414462827 申请日期 2014.08.19
申请人 Stion Corporation 发明人 Dounas Laila;Wieting Robert D.;Farris, III Chester A.
分类号 H01L31/0236 主分类号 H01L31/0236
代理机构 代理人
主权项 1. A film structure for manufacturing a photovoltaic device free of peeling effect, the structure comprising: a glass substrate having a surface region and a bulk region, the bulk region comprising sodium species, the surface region being surrounded by a peripheral edge region; a barrier material overlying the surface region and partially overlying the peripheral edge region; a conductor material overlying the barrier material and partially overlying the peripheral edge region; a first trench with the substantially all the conductor material therein being removed, the first trench being at least formed a closed loop in a vicinity of the peripheral edge region surrounding the surface region; one or more thicknesses of precursor materials overlying the conductor material and at least partially filling the first trench, wherein the one or more thicknesses of precursor materials being subjected to an environment of reactive Selenium gaseous species at temperatures above 400° C. and transformed into a film of photovoltaic absorber, and the film of photovoltaic absorber is characterized by substantially free from peeling-off the conductor material anywhere within the surface region surrounded by the first trench.
地址 San Jose CA US