发明名称 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
摘要 Discussed is a solar cell including a semiconductor substrate, a first conductive type region formed on a surface of the semiconductor substrate, a second conductive type region formed on the other surface of the semiconductor substrate, the second conductive type region being spaced from an edge of the semiconductor substrate and having a conductive type different from that of the first conductive type region, an isolation portion formed at a perimeter of the second conductive type region on the other surface of the semiconductor substrate, a first electrode connected to the first conductive type region, and a second electrode connected to the second conductive type region, wherein the second conductive type region has a boundary portion in a part adjacent to the isolation portion, and in which a doping concentration or a junction depth varies over a width of the boundary portion.
申请公布号 US2014352770(A1) 申请公布日期 2014.12.04
申请号 US201414289150 申请日期 2014.05.28
申请人 LG ELECTRONICS INC. 发明人 HWANG Sunghyun;LEE Daeyong;KIM Jinsung
分类号 H01L31/065;H01L31/18;H01L31/068 主分类号 H01L31/065
代理机构 代理人
主权项 1. A solar cell comprising: a semiconductor substrate; a first conductive type region formed on a surface of the semiconductor substrate; a second conductive type region formed on the other surface of the semiconductor substrate, the second conductive type region being spaced from an edge of the semiconductor substrate and having a conductive type different from that of the first conductive type region; an isolation portion formed at a perimeter of the second conductive type region on the other surface of the semiconductor substrate; a first electrode connected to the first conductive type region; and a second electrode connected to the second conductive type region, wherein the second conductive type region has a boundary portion in a part adjacent to the isolation portion in the semiconductor substrate, and in which a doping concentration or a junction depth varies over a width of the boundary portion.
地址 Seoul KR