发明名称 |
SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Discussed is a solar cell including a semiconductor substrate, a first conductive type region formed on a surface of the semiconductor substrate, a second conductive type region formed on the other surface of the semiconductor substrate, the second conductive type region being spaced from an edge of the semiconductor substrate and having a conductive type different from that of the first conductive type region, an isolation portion formed at a perimeter of the second conductive type region on the other surface of the semiconductor substrate, a first electrode connected to the first conductive type region, and a second electrode connected to the second conductive type region, wherein the second conductive type region has a boundary portion in a part adjacent to the isolation portion, and in which a doping concentration or a junction depth varies over a width of the boundary portion. |
申请公布号 |
US2014352770(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414289150 |
申请日期 |
2014.05.28 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
HWANG Sunghyun;LEE Daeyong;KIM Jinsung |
分类号 |
H01L31/065;H01L31/18;H01L31/068 |
主分类号 |
H01L31/065 |
代理机构 |
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代理人 |
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主权项 |
1. A solar cell comprising:
a semiconductor substrate; a first conductive type region formed on a surface of the semiconductor substrate; a second conductive type region formed on the other surface of the semiconductor substrate, the second conductive type region being spaced from an edge of the semiconductor substrate and having a conductive type different from that of the first conductive type region; an isolation portion formed at a perimeter of the second conductive type region on the other surface of the semiconductor substrate; a first electrode connected to the first conductive type region; and a second electrode connected to the second conductive type region, wherein the second conductive type region has a boundary portion in a part adjacent to the isolation portion in the semiconductor substrate, and in which a doping concentration or a junction depth varies over a width of the boundary portion. |
地址 |
Seoul KR |